APCSCRM 2025 Concludes Successfully！

The 6th Asia-Pacific Conference on Silicon Carbide and Related Materials (APCSCRM 2025) Concludes Successfully

On November 27, 2025, the 6th Asia-Pacific Conference on Silicon Carbide and Related Materials (APCSCRM 2025) drew to a successful and grand close at the Central China International Convention and Exhibition Center, Convention Center in Zhengzhou.

Co-hosted by the Innovation Association of Wide Bandgap Semiconductor Technology and the Institute of Physics, Chinese Academy of Sciences, and jointly organized by Beijing TTanKeBlue Semiconductor Co., Ltd., Henan Union Precision Material Co., Ltd., and the Science, Technology and Industry Information Bureau of Zhengzhou Airport Economy Zone the conference received strong support from the Management Committee of Zhengzhou Airport Economic Comprehensive Experimental Zone, The Office of the People's Government of Henan Province in Beijing  , and Henan Semiconductor Industry Association. Under the theme "Wide Bandgap, Wider Future," the conference facilitated in-depth discussions on the latest advancements in wide bandgap semiconductor (including SiC, GaN, Ga₂O₃, AlN, and diamond) materials, devices, and cutting-edge applications. It successfully attracted over 800 experts, scholars, and enterprise representatives from home and abroad, alongside nearly 400 industry institutions. Through profound exchanges and discussions, participants achieved fruitful outcomes in areas such as technological breakthroughs, industrial collaboration, and innovative development, marking a perfect conclusion to the event.

The three-day conference featured a compact and substantial agenda. The proceedings commenced on the afternoon of November 25 with the "Global Youth Forum on WBG Semiconductor Innovation and Development" and the "Industry-Innovation Convergence Forum: Diamond Tech Summit" The morning of November 26 saw the opening ceremony and Plenary Session, followed by three parallel thematic forums in the afternoon: "Materials and Equipment," "Device and Application," and "Ultra-WBG Semiconductors." The conference continued with Plenary Session on the morning of November 27 and concluded with the closing ceremony, bringing this grand gathering to a successful end.

November 25

Global Youth Forum on WBG Semiconductor Innovation and Development

The "Global Youth Forum on WBG Semiconductor Innovation and Development" was co-chaired by Professor Zhang Nan from Beijing Institute of Technology and Ms. Yang Mi, Deputy Secretary-General of the High-End Chip Industry Innovation and Development Alliance. Targeting young researchers and scholars in the wide bandgap semiconductor field, the forum aimed to showcase cutting-edge achievements, stimulate innovative thinking, and establish a high-level platform for the academic growth and collaborative exchange of young talents.

Over ten scholars and industry experts from home and abroad delivered presentations, including Researcher Lei Yun from Sichuan University; Associate Professor Zhang Fusheng from Qilu University of Technology; Product Design Manager Guiot from SOITEC; Associate Professor Tian Ye from the National University of Defense Technology; Assistant Researcher Zhao Hongchen, Head of the Research Department at the Zhengzhou Institute of China University of Geosciences (Beijing); Professor Ren Zeyang from Xidian University; Associate Professor Liu Yulong from the Beijing Academy of Quantum Information Sciences; Assistant Professor Gou Guangyang from the Aerospace Information Research Institute (AIR), Chinese Academy of Sciences; Liu Huan from Inner Mongolia University of Technology; Ye Xiaofang from Xiamen University; and Semiconductor Industry Researcher Jin Kaidi from the Minmetals Securities Research Institute. Their reports covered numerous frontier areas such as SiC powder synthesis, single crystal growth, substrate processing, ultra-precision manufacturing, diamond processing, MEMS sensors, heterojunction optoelectronic properties, non-destructive defect detection, and market prospect analysis. Through in-depth, multidisciplinary exchanges, the forum fully demonstrated the scientific vitality and innovation potential of young scholars, injecting new momentum into the academic research and application development of wide bandgap semiconductor technologies.

November 25

Industry-Innovation Convergence Forum: Diamond Tech Summit

This event was co-chaired by Ms. Cheng Lina, General Manager of SIW Semiconductor Co., Ltd., and Mr. Du Hongbing, Deputy Dean of the Research Institute of Synthetic Crystals. Under the theme "New Opportunities from the Core Drive Development, Unlocking New Application Markets," the forum focused on the scientific frontiers and industrial applications of diamond materials, bringing together forces from industry, academia, and research to jointly explore the full-chain innovation path for diamond semiconductors from materials to devices. Academician Jiang Shibin of the National Academy of Inventors (USA), Professor-level Senior Engineer Yin Lijun from Shanghai Zhengshi Technology Co., Ltd., and President Wang Zhiqiang from Henan Huifeng Diamond Co., Ltd., delivered keynote reports on cutting-edge industrial topics including "Precision Laser Processing of Diamond," "Progress and Challenges in the Application of Diamond in Thermal Management," and "Innovation and Applications of Diamond Powder."

A signing ceremony for collaborative achievements was held during the event.  Led by the Zhengzhou Airport Zone New Materials (Superhard Materials) Industry Headquarters, companies including Xi'an LaSiC Semiconductor Technology Co., Ltd.,Worldia Nice Nova Diamond Technology (Jiaxing) Co., Ltd., and Hangzhou Jingchi Electromechanical Co., Ltd., jointly signed the "Zhengzhou Airport Zone 'Core' Ecology Cooperation Plan for Wide Bandgap Semiconductors."Based in the Zhengzhou Airport Zone and leveraging the existing advantages of diamond materials, this cooperation aims to promote the industrial ecosystem construction for wide bandgap semiconductors, focus on related Research and Development and preparation, achieve self-reliance and controllability in core equipment, and jointly build platforms and supply chains to support industrial development.

An excellent solutions release ceremony was also held on-site, featuring 17 selected enterprise cases. Among them, CEO Liu Yongfeng of Beijing TSD Semiconductor Equipment Co., Ltd.; Xiao Litai, Strategy & Overseas Marketing Director of Shenzhen Naso Tech Co., Ltd.; CEO Yang Sen of Xi'an LaSiC Semiconductor Technology Co., Ltd.; and CEO Liu Dongli of Westlake Instruments (Hangzhou) Technology Co., Ltd., presented and explained cutting-edge solutions such as high-quality diamond grinding and polishing, intelligent dual-chamber manufacturing of SiC epitaxial reactors, water-jet-guided laser slicing, and ultrafast laser lift-off, collectively showcasing the technological innovation strength of the industry.

Poster display

Excellent solution Launch Ceremony

During the integration and connection session, guest representatives from Shanghai Zhengshi Technology Co., Ltd., Hangzhou Yinhu Laser Technology Co., Ltd., Beijing TSD Semiconductor Equipment Co., Ltd., Henan Huifeng Diamond Co., Ltd., IC RESEARCH TECHNOLOGY (WUHAN)CO, LTD, and Xidian University, among other units, engaged in discussions and exchanges.

Round Table Discussion

AM, November 26

Opening Ceremony

On November 26, the conference officially commenced with its opening ceremony. The ceremony was presided over by Professor Chen Xiaolong, a researcher at the Institute of Physics, Chinese Academy of Sciences (CAS), and Chief Scientist of TanKeBlue Semiconductor Co., Ltd. The conference was honored to host several distinguished guests, including Researcher Li Shushen, former Vice President of the Chinese Academy of Sciences and former Party Secretary and President of the University of Chinese Academy of Sciences, from the Institute of Semiconductors, CAS; Professor Xu Hongxing, President of Henan Academy of Sciences and Professor at Wuhan University; Tian Haitao, Deputy Secretary-General of the Henan Provincial People's Government and Director of the Administrative Committee of the Airport Economy Zone; Xu Xin, Chief Economist of the Henan Provincial Department of Industry and Information Technology; Professor Hiroshi Kawarada from Waseda University, a conference Co-chair; Zhang Hongjun, Deputy Director of the Administrative Committee of the Airport Economy Zone; and Xu Daqun, Second-Level Inspector of the Administrative Committee of the Airport Economy Zone. Numerous industry representatives from government agencies, domestic and international research institutes, and enterprises witnessed this significant moment.

Presided by

Chen Xiaolong

Researcher, Institute of Physics, Chinese Academy of Sciences

Chief Scientist, Beijing TanKeBlue Semiconductor Co., Ltd.

Addressed by:

Xu Hongxing

President, Henan Academy of Sciences

Professor, Wuhan University

Xu Xin

Chief Economist, Henan Provincial Department of Industry and Information Technology

Zhang Hongjun

Deputy Director, Administrative Committee of the Airport Economy Zone

Hiroshi Kawarada

Conference Co-chair, Professor, Waseda University

The conference invited over 70 industry experts, corporate representatives, and academics from various countries and regions including Germany, France, Sweden, the United States, Japan, South Korea, Russia, the Philippines, China, as well as Taiwan and Hong Kong regions of China. Focusing on wide bandgap semiconductor materials such as SiC, GaN, Ga₂O₃, and diamond, the guests shared the latest technological breakthroughs and industrialization pathways across the entire industry chain, encompassing material growth, device design, packaging and testing, and end applications. They also engaged in in-depth exchanges on cutting-edge directions such as ultra-wide bandgap semiconductor materials, advanced bonding technologies, and integration architectures. The event facilitated the exchange of forward-looking industry perspectives, showcased advanced corporate achievements, promoted mutual cooperation and exchange among industry, academia, research, and application sectors in the Asia-Pacific wide bandgap semiconductor field, and advanced the academic research, technological progress, and high-quality industrial development of wide bandgap semiconductor materials and devices.

AM, November 26

Plenary Session

The Plenary Session of this conference brought together strategic scientists and industry leaders from the global wide-bandgap semiconductor field. Focusing on core topics ranging from material breakthroughs and device innovations to system applications, it outlined a macro blueprint and cutting-edge pathways for industrial development.

High-level academic and industrial presentations were delivered by distinguished experts, including: Professor-level Senior Engineer LIU Guoyou, Scientist at CRRC and Deputy Director of the State Key Laboratory of Power Semiconductor and Integration Technology; Researcher XU Ke, President of the Jiangsu Institute of Third-Generation Semiconductors, Professor and Doctoral Supervisor at the Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, and Chairman of Suzhou Navi Technology Co., Ltd.; QI Hongji, Chairman of Hangzhou Fujia Gallium Technology Co., Ltd. and Director of the Hangzhou Institute of Optics and Fine Mechanics; LIU Chunjun, Director, Vice President and Research and Development Director of TanKeBlue Semiconductor Co., Ltd.; Professor Yano Hiroshi from the University of Tsukuba, Japan; Tenure Track Researcher Fausto Stella from the Politecnico di Torino, Italy; and Technical Director WANG Sen of Henan Union Precision Material Co., Ltd.

Their reports covered multiple strategic areas, such as power semiconductor technology, gallium nitride single crystals and epitaxy, industrial pathways for gallium oxide, large-size silicon carbide materials, reliability mechanisms of MOSFETs, high-efficiency vehicle inverters, and comprehensive substrate solutions. Deeply integrating global technological trends with local industrial practices, these presentations shed light on collaborative innovation strategies for the future development of wide-bandgap semiconductors.

PM, November 26

Session 1: Materials and Equipment

The forum on Materials and Equipment delved into the uppermost stream of the industrial chain, centering on core topics such as the preparation and processing of wide-bandgap semiconductor materials, as well as innovations in key equipment. It provided critical insights aimed at achieving independent control and iterative upgrading of foundational industrial technologies.

A series of high-level presentations were delivered by leading scholars and industry experts, including General Manager ZHANG Zesheng of Beijing Lattice Semiconductor Co., Ltd.; Professor LIU Yuan from Tsinghua University; Professor REN Guoqiang of the Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences and Founder of Naan Semiconductor Technology (Suzhou) Co., Ltd.; Senior R&D Manager XIANG Peng from Suzhou Jingzhan Semiconductor Co., Ltd.; Hiroshi KANAZAWA, Fellow from the Device Solutions Business Unit of Resonac Corp.; MU Fengwen, Founder and Chairman of iSABers Group Co., Ltd.; Professor LIN Xuechun from the Institute of Semiconductors, Chinese Academy of Sciences; Professor GAO Peng of Peking University; Niraj Mahadev, Vice President of New Markets at ENTEGRIS; DONG Chen, R&D Manager of Grirem Advanced Materials Co., Ltd.; General Manager CHEN Yuzhong of TIME-TECH SPECTRA; WEN Ziying, Chairman and Vice President of Technology at Huaying Research Co. Ltd.; Technical R&D Manager LIU Mincong of Zhejiang Xinghui New Materials Technology Co., Ltd.; and Deputy General Manager LIU Guojing of CETC Beijing Electronic Equipment Co., Ltd. Their reports encompassed a wide array of frontier topics, such as liquid-phase growth and solution-based P-type growth of silicon carbide, ammonothermal growth of gallium nitride, large-size epitaxy and epitaxial wafer development, advanced bonding and integration, laser precision processing, interfacial phonon transport detection, manufacturing technology for large-diameter substrates, novel rare-earth materials, non-destructive substrate testing, surface contamination analysis, thermal field materials, and comprehensive cutting-grinding-polishing solutions.

This forum comprehensively demonstrated the full-chain innovative capabilities spanning from basic material synthesis to high-end equipment manufacturing, highlighting the fundamental role of strengthening the industrial foundation in driving the high-quality development of the wide-bandgap semiconductor industry.

PM, November 26

Session 2: Device and Application

The Device and Application Session was chaired by Associate Professor Zhang Xufang from North China University of Technology. This session focused on research and development breakthroughs and industrial applications of wide-bandgap semiconductor power devices, radio frequency devices, and module integration technologies. In-depth discussions were conducted on comprehensive topics ranging from chip design and manufacturing processes to system reliability and market trends.

The session featured presentations by experts and industry representatives, including Professor AO Jinping from Jiangnan University, Professor Joel T. Asubar from the Graduate School of Engineering at the University of Fukui, Researcher WEI Jin from Peking University, Professor Tetsuo Hatakeyama from the Department of Electrical and Electronic Engineering at Toyama Prefectural University, Associate Professor Yasuto HIJIKATA from Saitama University, Chief Scientist Sun Botao from Qingchun Semiconductor (Ningbo) Co., Ltd., Deputy General Manager CAO Jun from Inventchip Technology Co., Ltd., Dr. YU Jinying from Li Auto, Founder and Chief Executive Officer Aly Mashaly from VEROTERA, Senior Engineer Hao Xiamin from Beijing Institute of Smart Energy, Assistant Professor ZHENG Pengcheng from Shanghai Institute of Microsystem and Information Technology under the Chinese Academy of Sciences, Research Associate Seishi Akahori from Toray Research Center, and Analyst GONG Ruijiao from TrendForce.

The presentations covered multiple cutting-edge domains, including gallium nitride electronic devices, advanced normally-off technology, power integration, silicon carbide metal-oxide-semiconductor field-effect transistor physical modeling, quantum optical color centers, industrialization of high-performance silicon carbide chips, automotive-grade reliability research, advanced packaging technologies, artificial intelligence-based prediction of device performance, radio frequency filters, impurity characterization, and market trend analysis. These presentations comprehensively demonstrated the latest advancements and application potentials of wide-bandgap semiconductor devices in core fields such as power electronics, communications, automotive engineering, and artificial intelligence. The session underscored the critical importance of optimizing device performance and ensuring system-level reliability for successful industrial deployment.

PM, November 26

Session 3: Ultra-WBG Semiconductors

Th Ultra-WBG Semiconductors Session was chaired by Professor JIA Zhitai from Shandong University. This session centered on next-generation ultra-wide-bandgap semiconductor materials—represented by gallium oxide and diamond—and conducted in-depth explorations of breakthrough research and industrialization prospects in cutting-edge fields such as extreme electronics, ultraviolet optoelectronics, quantum information, and power devices.

The session featured insightful contributions from distinguished experts and industry leaders, including Chairman & Professor TANG Weihua of Suzhou GAO Semiconductor Co., Ltd. and Nanjing University of Posts and Telecommunications, Principal Research Engineer Daniela Gogova from Linköping University, Postdoctoral Researcher HU Guofeng from The Hong Kong University of Science and Technology (Guangzhou), Founder & CEO WU Liang of Ultratrend Technologies (Hangzhou), Director XIE Nan of the Integrated Circuit Research Institute at China Center for Information Industry Development, Chairman & Chief Scientist LIANG Jianbo of Jinghe Semiconductor Technology Co., Ltd. and National Third-Generation Semiconductor Technology Innovation Center (Suzhou), Professor WANG Hongxing from Xi'an Jiaotong University, Chief Researcher LIAO Meiyong from National Institute for Material Science, Business Development Manager XIAO Ji of ELEMENT SIX, Professor WU Sudong from Yongjiang Laboratory, CEO MARIIA LAMBRINAKI of Suzhou STR Software Technology Co., Ltd., and Professor ZHANG Jingkun from Zhengzhou University of Aeronautics.

These experts shared cutting-edge advancements across key domains, including gallium oxide optoelectronic devices, material growth and doping, aluminum nitride single crystal preparation and industrialization, advanced bonding technologies, diamond semiconductor devices, quantum sensing materials, large-scale wafer fabrication, process modeling, and surface metallization. The forum systematically mapped the innovation chain of ultra-wide-bandgap semiconductor materials—from fundamental physical property research and controllable growth to disruptive device exploration—thereby delineating a clear technological roadmap and collaborative blueprint for securing leadership in future semiconductor technology development.

AM, November 27

Plenary Session

The Plenary Session on November 27 was co-chaired by Professor ZHANG Feng from Xiamen University and Distinguished Research Fellow JIANG Haoqing from the Henan Academy of Sciences, who also serves as the Director of the Institute of Laser Manufacturing. As the closing forum of the conference, this session focused on frontier exploration of ultra-wide-bandgap semiconductors and system-level applications of power devices, conducting in-depth discussions on key technical challenges and future trends ranging from breakthroughs in new materials to industrialization deployment.

The session featured presentations by distinguished experts and industry leaders, including Professor TAO Xutang from Shandong University, Deputy Chief Engineer YANG Fei from the State Grid China Electric Power Research Institute, Senior Technical Director CHEN Lifeng from Infineon Technologies, Professor ZHANG Wali from Yongjiang Laboratory, Professor Hiroshi Kawarada from Waseda University, and Vice President and Professor SHAN Chongxin from Zhengzhou University. They shared the latest research progress and industry insights across multiple directions, including ultra-wide-bandgap crystalline materials, high-voltage power system devices, system applications of silicon carbide power devices, AR/VR diffractive optical devices, diamond MOSFETs, and diamond optoelectronic devices.

This plenary session not only presented a complete technological chain spanning materials science, device physics, and system applications, but also integrated cutting-edge academic exploration with significant engineering demands. By doing so, it provided critical insights for the deep integration and innovative development of wide-bandgap and ultra-wide-bandgap semiconductor technologies across multiple domains, thereby charting a clear path for future advancements in this strategic field.

November 25-27

Wide-Bandgap Semiconductor Industry Special Exhibition Zone

The 2,300-square-meter Wide-Bandgap Semiconductor Industry Special Exhibition Zone established by the conference attracted over 110 exhibiting units, including enterprises, research institutes, and universities. It comprehensively showcased cutting-edge application fields such as wide-bandgap semiconductor consumables, intelligent equipment, advanced materials, devices, packaging and testing, AR display, and SiC-based new energy electric vehicles, presenting the latest global technological achievements and solutions. This initiative constructed a full-chain open innovation ecosystem integrating "government